Brand
Encapsulation
M712(1)
Packaging
(1)
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  • Brand: FUJI
    Encapsulation: M712
    Category: IGBTtransistor
    Description: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
    8095
    1+
    $881.9998
    10+
    $851.0524
    50+
    $847.1840
    100+
    $843.3156
    150+
    $837.1261
    250+
    $831.7103
    500+
    $826.2945
    1000+
    $820.1050

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